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| BPW16N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES * Package type: leaded * Package form: T-3/4 * Dimensions (in mm): O 1.8 * High photo sensitivity * High radiant sensitivity * Suitable for visible and near infrared radiation * Fast response times * Angle of half sensitivity: = 40 94 8638 * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS DESCRIPTION BPW16N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with flat window. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. * Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT BPW16N Note Test condition see table "Basic Characteristics" Ica (mA) 0.14 (deg) 40 0.1 (nm) 450 to 1040 ORDERING INFORMATION ORDERING CODE BPW16N Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-3/4 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t3s Connected with Cu wire, 0.14 mm2 tp/T = 0.5, tp 10 ms Tamb 55 C TEST CONDITION SYMBOL VCEO VECO IC ICM PV Tj Tamb Tstg Tsd RthJA VALUE 32 5 50 100 100 100 - 40 to + 100 - 40 to + 100 260 450 UNIT V V mA mA mW C C C C K/W www.vishay.com 366 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81515 Rev. 1.7, 08-Sep-08 BPW16N Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 125 PV - Power Dissipation (mW) 100 75 RthJA = 450 K/W 50 25 0 0 94 8308 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note Tamb = 25 C, unless otherwise specified Ee = 1 mW/cm2, = 950 nm, IC = 0.01 mA VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V SYMBOL V(BR)CEO ICEO CCEO Ica p 0.1 VCEsat ton toff fc 4.8 5.0 120 0.07 MIN. 32 1 8 0.14 40 825 450 to 1040 0.3 200 TYP. MAX. UNIT V nA pF mA deg nm nm V s s kHz BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 2.0 104 ICEO - Collector Dark Current (nA) Ica rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 VCE = 5 V Ee = 1 mW/cm2 = 950 nm 10 3 VCE = 20 V 102 101 100 20 94 8235 40 60 80 100 Tamb - Ambient Temperature (C) 94 8239 Tamb - Ambient Temperature (C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature Document Number: 81515 Rev. 1.7, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 367 BPW16N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 1 ton / toff -Turn on / Turn off Time (s) Ica - Collector Light Current (mA) 12 10 V CE = 5 V RL = 100 = 950 nm 0.1 V CE = 5 V = 950 nm 0.01 8 6 4 2 0 toff ton 0.001 0.01 94 8236 0.1 1 10 94 8238 0 4 8 12 16 E e - Irradiance (mW/cm2) I C - Collector Current (mA) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current S ( )rel - Relative Spectral Sensitivity 100 1 Ica - Collector Light Current (mA) 1.0 0.8 0.6 0.4 0.2 0 400 = 950 nm Ee =1 mW/cm2 0.5 mW/cm2 0.1 0.2 mW/cm2 0.01 0.1 94 8237 1 10 600 800 1000 V CE - Collector Emitter Voltage (V) 94 8241 - Wavelength (nm) Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Relative Spectral Sensitivity vs. Wavelength CCEO - Collector Emitter Capacitance (pF) 20 16 f = 1 MHz Srel - Relative Radiant Sensitivity 0 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 12 8 4 0 0.1 1 10 100 VCE - Collector Emitter Voltage (V) 94 8240 94 8312 Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com 368 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81515 Rev. 1.7, 08-Sep-08 - Angular Displacement BPW16N Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters R 1.65 E C 3.3 0.15 0.3 0.1 2.4 0.15 Chip position O 1.8 0.1 (1.3) 2.2 0.8 0.5 29.1 2.7 0.3 Area not plane 0.25 2.54 nom. 6.544-5047.01-4 Issue: 2; 19.12.00 96 12188 1.5 0.5 + 0.2 - 0.1 0.4 + 0.15 technical drawings according to DIN specifications Document Number: 81515 Rev. 1.7, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 369 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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